Controlled rectifier having ring gate with internal protrusion for dV/dt control

摘要

A controlled rectifier employing a ring gate and an auxiliary emitter is disclosed. Auxiliary gates of different sensitivity cooperate with the auxiliary emitter. The controlled rectifier has gallium-diffused junctions and a phosphorus-diffused emitter. Phosphorus gettering dots or rings are diffused into the gallium-diffused region at the upper surface of the device surrounding and beneath portions of the ring gate electrode. The ring gate electrode has a narrow finger which extends from its internal periphery and overlaps a narrow extension from the main central emitter in order to provide a non-injecting current path for the peripheral distributed capacitance current which flows during the application of forward voltage. The value of this current is proportional to the rate of application of voltage or dV/dt.