发明名称 |
Bidirectional power FET with integral avalanche protection |
摘要 |
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Integral avalanche protection is provided by a pair of isolation regions forming protective barrier junctions with a common layer, which junctions are in parallel with the reverse blocking junctions of the power FET in the OFF state and have a lower reverse breakover threshold for protecting the latter. A plurality of integrated FETs each have left and right source regions and left and right channel regions with a common drift region therebetween, and conduct current in either direction according to the polarity of main terminals.
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申请公布号 |
US4577208(A) |
申请公布日期 |
1986.03.18 |
申请号 |
US19820421932 |
申请日期 |
1982.09.23 |
申请人 |
EATON CORPORATION |
发明人 |
SCHUTTEN, HERMAN P.;LADE, ROBERT W.;BENJAMIN, JAMES A. |
分类号 |
H01L21/764;H01L29/10;H01L29/40;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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