| 摘要 |
A structure for a "universal crossunder" which can reliably interconnect two spaced regions of semiconductor material of the same conductivity type is described. The structure is comprised of two layers, one P type and the other N type which lies in the area between the regions which are to be electrically joined. Accordingly, whether the regions to be electrically connected are P type or N type, electrical connection is made between them through one of the layers of the crossunder. The method of making the "universal crossunder" entails introducing a fast diffusing impurity of one conductivity type and a slow diffusing impurity of the opposite conductivity type into the area between the regions to be joined. Thus, electrical contact between the two spaced regions will be made through one or the other of the layers of the circuit.
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