| 摘要 |
PURPOSE:To manufacture a base region and an emitter region finely, precisely and simply by using an oxidation-resistant film directly or indirectly and forming each region in a transistor through a self-alignment method. CONSTITUTION:A thin oxide film 2 is shaped onto the surface of a semiconductor substrate 1, and an oxidation-resistant film 3 is formed onto a region as an emitter in a transistor (Tr). A P<+> type base contact region 4 is shaped through ion implantation while using the film 3 as a mask, and the region 4 is driven in through heat treatment. Accelerating voltage is increased from a pre-process, and a P type base region 5 is formed through ion implantation. The oxide film except a region in which the film 3 adheres is shaped thickly through selective oxidation while employing the film 3 as a mask. The film 3 is removed, and an N<+> type emitter region 6 is formed in the region 5 through ion implantation. According to the method, each region in the Tr can be formed through a self- alignment system using the film 3 as the mask directly or indirectly when the film 3 is patterned. |
