,申请号JP19840070399U-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称
摘要
申请公布号	JPS60182637(U)	申请公布日期	1985.12.04
申请号	JP19840070399U	申请日期	1984.05.16
申请人		发明人
分类号	F24F11/02;(IPC1-7):F24F11/02	主分类号	F24F11/02
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Light emitting diode and method for manufacturing the same

Semiconductor device including a drift zone and a drift control zone

Substrate bonding with diffusion barrier structures

Method of manufacturing a semiconductor device including dummy regions and dummy wirings

Heterojunction bipolar transistors with intrinsic interlayers

Article storage facility and article storage method

Substrate liquid processing apparatus, liquid processing method, and storage medium

Analog floating-gate memory manufacturing process implementing n-channel and p-channel MOS transistors

Gradient dopant of strained substrate manufacturing method of semiconductor device

Semiconductor device having aligned side surfaces

Packaging methods and structures using a die attach film

Organic light emitting diode display

Organic light-emitting diode display panel

Method of manufacturing a sensor device having a porous thin-film metal electrode

Method of forming edge devices for improved performance

Systems and methods for dopant activation using pre-amorphization implantation and microwave radiation

Method of manufacturing thin film transistor

Light emitting device package

Touch screen system having dual touch sensing function

Solid-state imaging device