| 摘要 |
PURPOSE:To obtain the interconnection structure free of crosstalk by a method wherein, when a multilayer interconnection structure is provided on a bipolar LSI or an MOS.LSI or the like, a conductive layer is formed between the interconnection adjoining each other, and the potential of said conductive layer is fixed to the earth potential. CONSTITUTION:The first layer of Al wiring 12 of the prescribed shape is formed on the semiconductor substrate 11 whereon an insulating film is provided on the surface, and an interlayer insulating film 13 such as PSG is coated on the whole surface including the wiring 12. Then, the second layer of Al conductor 14 to be connected to the earth potential is coated on the whole surface. Subsequently, the third layer of Al wiring 16 of the prescribed shape is provided on the above- mentioned film 15, and a multilayer interconnection structure is formed. According to this constitution, the first layer of Al wiring 12 and the third layer of Al wiring 16 are used as signalling wirings, and the potential of the second layer of Al conductor 14 is fixed to the earth potential. Through the above- mentioned procedures, each signal wiring is electrostatically shielded, and the noise and the erronous operation generating by crosstalk can be prevented. |
