| 摘要 |
PURPOSE:To improve stability against time lapse and environmental changes in joining photoconductive layer with a surface protective layer different in optical band energy from each other by changing Fermi level of one of the layers by continuously changing the concn. of impurities to change its conduction type. CONSTITUTION:A conductive substrate 104, a photoconductive layer 102, and a surface protective layer 103 are successively laminated, and the layer 102 is made of a-Si(O), and contains as impurities, an element of IIIb, such as B, in a concn. distribution being uniform in a face in parallel to the surface of the substrate 104, and richer on the interface of the layer 103, and reaching the max. concn. value near the interface. The layer 103 is made of a-Si(O), higher in O concn. than the layer 102, and its band gap is made larger than that of the layer 102. When the layers 102, 103 different in the optical band energy from each other are joined with each other, transfer of photocarriers can be improved in the conduction band or the valence band by changing the concn. of impurities to change the conduction type of the layer 102. As a result, the obtained photoconductive material is superior in time lapse stability, environmental change resisting characteristics, electrostatic charge retentivity, and characteristics resisting residual potential and image disturbance. |
