| 摘要 |
PURPOSE:To set lower the temperature of a bonding tool and to obtain a higher junction strength between each Au protrusion and each aluminum electrode of a semiconductor element by a method wherein the semiconductor element is worked and heated by the bonding tool while the semiconductor element is being heated in a transfer bumping system. CONSTITUTION:Au protrusions 5 are transfer-junctioned onto Sn-plated film leads 3 provided extendedly from resin films 1, and the Au protrusions 5 and the aluminum electrodes 6 of a semiconductor element 2 are mutually positioned. A stand 30 is heated by a heater 31, the semiconductor element 2 is heated, a bonding tool 36 is heated and pressed, and the Au protrusions 5 are junctioned to the aluminum electrodes 6 of the semiconductor element 2. According to this method, as the escape of heat, which is given out of the semiconductor element 2 and the film leads 3, is remarkably reduced, the temperature of the bonding tool 36 can be set lower. As a result, the temperature of the junction boundary between each Au protrusion 5 and each aluminum electrode 6 of the semiconductor element 2 can be constantly maintained, thereby enabling to obtain a stable junction in between both. |
