发明名称 MOUNTING METHOD OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain enough adhesive strength in case of large pellets by improving wetting properties of low melting point glass by a method wherein metal capable of anodic oxidation is spread over the back surface of a pellet followed by anodic oxidation of a surface of the metal to form an oxide film. CONSTITUTION:A metal film capable of anodic oxidation is arranged on the back surface of a semiconductor element, followed by anodic oxidation of a surface of the metal film to form an oxide film. This semiconductor element is mounted and fixed by fusing low melting point glass. Back surface of a pellet 2 is covered with an Al film 1, for example, by vapor deposition or sputtering to the thickness 1-2mum. The low melting point glass 5 for mounting of pellets is formed in a cavity part of a ceramic substrate 4 of a glass seal package having low melting point glass 3 for sealing in a sealing part, and is fused by heating. Then the pellet 2 is bonded to said glass 5 with pressure-welding followed by cooling to be fixed.
申请公布号 JPS604229(A) 申请公布日期 1985.01.10
申请号 JP19830113145 申请日期 1983.06.23
申请人 NIPPON DENKI KK 发明人 YAMAMICHI NOBUYUKI
分类号 H01L21/52;H01L21/58;(IPC1-7):H01L21/58 主分类号 H01L21/52
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