| 摘要 |
PURPOSE:To improve the quality of a pulled single crystal in the manufacture of a single crystal by a rotating and pulling-up method by improving the shape of resistance heating elements arranged around a crucible so as to uniformalize the temp. distribution of a molten starting material in the crucible in the radial direction. CONSTITUTION:When a signle crystal of Si, GaP, GaAs, InP, InSb or an oxide such as LiTaO3 or LiNbO3 is manufactured by a rotating and pulling-up method using a molten starting material, a quartz crucible 25 contg. said melt 26 and B2O3 as a liq. sealant is heated with resistance heating elements 10 arranged concentrically around the crucible 25 so as to keep the molten state. The elements 10 form continuously a resistor through many slits 15. The thickness dw of the side wall of the resistor is made larger than the thickness dB of the bottom, and an electric current is sent from an electrode 12 to an electrode 13 to generate heat. The temp. gradient of the melt 26 in the crucible 25 in the radial direction is extremely reduced, and the quality of a single crystal pulled up with a seed crystal 29 is improved.
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