| 摘要 |
PURPOSE:To improve heat radiating characteristics, by utilizing the increasing effect of a crystal growing speed in grooves, providing a semiconductor layer in the vicinity of an active layer with good reproducibility, blocking a current, which flows to the outside of a mesa region, and forming a P type GaAs layer on the entire surface. CONSTITUTION:On an N type GaAs substrate 1, an N type Al0.4Ga0.6As layer 2, an Al0.05Ga0.95As layer 3, which is to become an active layer, a P type Al0.4Ga0.6As layer 4, and a P type GaAs layer 5 are formed. Etching is performed so as to reach the substrate 1, and a stripe shaped mesa region having an active region is formed. At this time, two grooves reaching the substrate 1 are provided. Then, a P type Al0.35Ga0.65As layer 6, an N type Al0.35Ga0.65As layer 7, and a P type Al0.35Ga0.65As layer 12 are sequentially formed, so as to surround the side surface of the mesa. Then, crystal growth is performed mainly on the side surface of the mesa. The high resistance layers, which are laminated on the upper part of the mesa, are completely removed. A P-type GaAs layer 13 is formed on the entire surface of the crystal including the upper part of the mesa. Then, a P type impurity diffused layer 8, a P type ohmic electrode 10, and an N type ohmic electrode 11 are formed. |
