Method of manufacturing a semiconductor device including a MIS field effect transistor.

摘要

A method for manufacturing a semiconductor device, comprises the steps of sequentially forming a gate insulation film (12), a gate electrode film (13) of polycrystalline silicon and a self-alignment film (14) of silicon nitride on a semiconductor substrate (11) having one conductivity type, patterning the gate electrode film (13) and the self-alignment film (14) in an identical electrode pattern, ion-implanting an impurity of an opposite conductivity type into the substrate (11) using the silicon nitride pattern (14) as a mask, thereby forming source and drain regions (15a, 15b), forming an insulation layer (16) on the entire surface of the substrate (11) including the silicon nitride pattern (14), performing annealing, removing the remaining insulation layer (16) which is located on the silicon nitride pattern (14), removing the silicon nitride pattern (14) so as to expose the gate electrode pattern (13), and forming a metal film (18) on the exposed gate electrode pattern (13).