发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the structure of a case, which increases the surge withstanding voltage of an element, by connecting lead wires to a pair of electrode holding a semiconductor substrate and to both ends of the electrodes so as to form an axial shape, injecting a resin from the upper part of a case, and thereafter hardening the resin. CONSTITUTION:A pair of electrodes 3 holding a semiconductor substrate is soldered. Lead wires 4 are soldered to both ends of the electrodes. Thereafter, a casting resin 8 is injected through a hole in a case and hardened. Partial projections are formed at places, which are contacted with the back surface of the header part of the electrode 3, and a contact points to the electrode 3 are provided. Therefore the yield strength in the tensile direction of the element is secured at a part other than the projection parts of the case 7. The projection parts 9 of the case can be also used for position alignment of the case and the electrode. Therefore, the machining of the header of the electrode 3 can be performed by one step. By one-step machining of the header of the electrode 3, the volume of the electrode 3 can be made large. Thus the surge withstanding voltage can be increased.
申请公布号 JPS62181452(A) 申请公布日期 1987.08.08
申请号 JP19860021946 申请日期 1986.02.05
申请人 HITACHI LTD 发明人 TOIDA HIROTOSHI;HIDAKA TOSHIYUKI
分类号 H01L23/28;H01L23/051 主分类号 H01L23/28
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