| 摘要 |
PURPOSE:To keep constant a potential of semiconductor surface and also keep small dispersion of resistance value of a resistance element by providing a conductive film on an insulator film, connecting a part of it to a substrate as a constant potential electrode and by keeping a constant voltage difference for resistance element. CONSTITUTION:A P type resistance region 2 and an N<+> type connecting region 7 are provided on the prinicpal surface of an N type silicon substrate 1, an aluminium terminal electrodes 3 are provided at both ends of resistance region 2, while insulator films 4, 5 are formed on terminal electrode 3 and the main surface of semiconductor other than said connecting region 7, while an aluminium constant voltage electrode 6 is provided on the surface of silicon dioxide film 4 on said resistance region 2 and a part of said constant voltage electrode 6 is connected to the connecting region 7. Here, a silicon dioxide film 5 formed at the electrode 6 is made thinner than the silicon dioxide film 4 formed at the other region. |
