| 摘要 |
<p>PURPOSE:To form a multilayer thick plated electrode simply by using a metal layer having a barrier effect as a foundation layer for electrolytic plating. CONSTITUTION:The electrode 13 of the three layers of AuGe-Ni-Au is formed onto an N epitaxial layer 12 on a semi-insulating GaAs substrate 1, and the foundation metallic layer 15 for electrolytic plating is evaporated while using an underlay resist layer 14 as a mask. The layer 15 may be the single metal layer having the barrier effect or be formed in the multilayer structure of Ti-Mo-Au, etc., and film thickness satisfies both effects of the barrier metal layer and the foundation for electrolytic plating, and is selected in thickness capable of lift-off. A resist mask 16 is formed, and a thickly plated layer 17 is formed through electrolytic plating. The film 14, the peripheral edge of the metal layer 15 and the film 16 are removed through lift-off, and the device is completed. According to such constitution, processes are decreased more than the conventional methods, and operation efficiency is improved.</p> |
