| 摘要 |
PURPOSE:To obtain a reproduced picture of extremely high quality, by providing an insulated layer into a semiconductor substrate with a prescribed depth and therefore preventing effectively the electric charge generated deep into the substrate by a photoelectric conversion from leaking out to the contiguous charge storing part or charge transfer part. CONSTITUTION:As shown in figures, an insulated layer 10 is formed into a semiconductor substrate 3 with a fixed depth. As a result, electric charges 4-3, 4-4 and 4-5, for example, having a large depth in the substrate 3 among those generated by a photoelectric conversion are prevented by the layer 10 from moving to charge storing parts 5-1 and 5-2 as well as to charge transfer parts 1-1 and 1-2 respectively. This can prevent the deterioration of the reproduced picture quality due to the leakage of electric charge. It is enough to provide thelayer 10 just in the lower parts of the transfer parts 1-1 and 1-2 and not to entire inner surface of the substrate 3. |
