| 摘要 |
PURPOSE:To form a silicide layer having excellent densifying property by mixing the gas of the fluoride of the high-melting point metal, monosilane and hydrogen and reacting the mixed gas with a semiconductor compound. CONSTITUTION:The fixed quantities of the gases are each supplied to a reaction vessel 7 through flowmeters 4, 5, 6 from a tungsten hexafluoride source 1, a monosilane source 2 and a hydrogen source 3. The endothermic reaction of WF6+XH2+2SiH4=WSi2+6HF+(X+1)H2 advances in the vessel 7, and the tungsten silicide (WSi2) layer is formed onto a silicon substrate 8. According to this method, there is no danger that a cavitation phenomenon is generated. |
