| 摘要 |
PURPOSE:To obtain a good crystalline semiconductor layer with no pattern deformation by irradiating an energy beam to a non-singlecrystal Si island surrounded by an insulating film. CONSTITUTION:After forming on a semiconductor substrate 1 an insulating film 2 such as of SiO2, a polycrystalline Si is deposited thereupon, which is etched to form a polycrystalline Si island 3. An insulating film 4 such as of an oxide film is formed on the surface of the island. After melting that the polycrystalline Si 3 is single-crystallized by the irradiation of an energy beam such as a laser. Thus, an Si crystal island 3' having large diameter grains, which is analogous to a singlecrystal Si in structure, is obtained. In this process the insulating film 4 on the even parts of the polycrystalline Si 3 may be removed by etching before the energy beam irradiation with the film 4 at the sides of the island left intact. This prevents the molten polycrystal Si from flowing out in a lateral direction. |
