| 摘要 |
<p>PURPOSE:To make the device suitable for optical switches by embedding a layer having the different refractive index in the region which comprises parts of a confining region and an active region at one side of a stripe shaped region and a part of a confining region beneath the active region, and deflecting light to either direction in a junction plane along the stripe shaped region. CONSTITUTION:On an n type InP substrate 11, an n type InP confining layer 12, an InGaAsP active layer 13, and a p type InP confining layer 14 are layered and epitaxially grown. The region, which comprises the outside parts of the layers 14 and 13 from the area which is to become a stripe forming region 17 later and a part of the layer 12, is etched away. A p type refractive index difference forming layer 15 is formed in said region. Then an n type InP cap layer 16 is grown on said layer 15 and the layer 14 continued from the layer 15. The p type stripe region 17, which enters the layer 14 and whose lower side is separated from the layer 15, is formed at the center of the layer 16 by the diffusion of Cd, Zn, and the like. Thereafter a positive electrode 18 is deposited on the entire surface, and a light irradiating window 18a which corresponds to the region 15 is provided at the one side of the region 17. A negative electrode 19 is deposited on the back surface of the substrate 11.</p> |
