| 摘要 |
A resistance-type oxygen sensor which is provided to be used mainly for measuring the oxygen gas partial pressure of automobile exhaust gas, and which has a short output response time in response to changes in oxygen partial pressure, low resistivity of the oxide semiconductor, and low temperature dependence of the resistivity. In a resistance-type oxygen sensor, in which the oxygen gas detection part comprises an oxide semiconductor, the oxide semiconductor is an oxide comprising cerium ions and hafnium ions, the amount of substance of cerium ions as a percentage of the amount of substance of positive ions is 60 mol % or more, the amount of substance of hafnium ions as a percentage of the amount of substance of positive ions is 3 to 30 mol %, and the hafnium ions are an oxide in solid solution in the parent phase.
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