发明名称 |
METHOD FOR MANUFACTURING A HYBRID INTEGRATED CIRCUIT DEVICE |
摘要 |
A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al2O3 layer on a metal substrate, a step of forming on the Al2O3 layer a resist layer having a pattern opposite to that of a copper layer which will be formed on the Al2O3 layer by a later step, a step of forming the copper layer on the Al2O3 layer using the resist layer as a mask, a step of impregnating thermosetting material into both the Al2O3 layer and the copper layer, and a step of providing at least one semiconductor element on the copper layer. |
申请公布号 |
EP0057085(A3) |
申请公布日期 |
1982.09.01 |
申请号 |
EP19820300306 |
申请日期 |
1982.01.21 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
NAGASHIMA, KENJI;MATSUMOTO, HIROSHI;TANAKA, MASATAKA;OODAIRA, HIROSI;IWASE, NOBUO |
分类号 |
H05K3/44;H01L21/48;H01L23/14;H01L23/373;H01L25/16;H05K1/05;H05K3/22;H05K3/28;(IPC1-7):01L21/48;01L49/02;01L23/14;01L25/16 |
主分类号 |
H05K3/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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