| 摘要 |
PURPOSE:To prevent the formation of projections on the surface of a metal film when a heat treatment is performed by a method wherein, after the metal wiring film has been formed, a rare-gas element or B, As, P or Si ion is implanted. CONSTITUTION:An SiO2 film 3 is formed on the P type Si substrate 1 whereon an N<+> type diffusion layer was formed, and a contact hole is provided on the SiO2 film 3. On this SiO film 3, an Al-1.5% Si alloy film 5 of approximately 1.0mum is formed by sputtering, and for example, Ar<+>40KeV is ion-implanted at a dosage of 3X10<15>atom/cm<2>. After a resist patterning process has been performed, an Al-Si alloy is etched, and a PSG film for passivation is formed after the resist has been removed. Accordingly, no projections are formed on the alloy film 5 in the heat treatment process when the PSG film is formed, and the breakdown of the insulating film on the alloy film 5 and the breaking of wiring can be prevented. |
