| 摘要 |
PURPOSE:To improve the heat resistance and electric conductivity of a lead material by forming the lead for a semiconductor of a material mixed with Sn, P, Zr and Cu. CONSTITUTION:A lead for a semiconductor is formed of a material containing a composition of 1.0-3.0wt% of Sn, 0.001-0.030wt% of P, 0.005-0.09wt% of Zr and the residue of Cu and inevitable impurities. Thus, the lead can have the mechanical strength and bending property required for the semiconductor and also heat resistance and high conductivity capable of coping with the improvement in the power. |
