| 摘要 |
PURPOSE:To improve target signal level by etching a target pattern part in a process of photoresist so as to form a target. CONSTITUTION:On an oxide film 2 to form a gate insulator film, which is formed on an Si substrate 1, a membraneous conductive film 3 which is hard to etch by an HF etching liquid is formed simultaneously with formation of a gate and wiring. Next, after a CVD film 4 to serve as an inter-layer insulator film is formed, a target part is etched in a process of photoresist to form a target, which is employed for subsequent mask alignment. In this case, when the film 4 is formed in the place of the film 3 where there is a difference in level, the film thickness turns different between parts (a) and (b), where (a) is thinner than (b). Accordingly, by etching the film 4, the film 2 is turned to be in an overhang state 5, and thus a value of high target signal level is obtained by scanning of mask alignment. |
