Structure of the insulator-semiconductor type

摘要

Structure of the insulator-semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (AIIIBV) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (AIIIBV)S4. It also relates to a process for the preparation of such a structure. Applications of the invention occur in the fields of microelectronics and optoelectronics.