| 摘要 |
Si-crystals with columnar structures are produced by casting a silicon melt through a gap provided in a crucible onto a melt-resistant carrier body having periodically spaced crystallization-seed centers on a surface thereof facing the melt, and allowing the so-cast molten silicon to cool so that crystallization of the melt onto the seed centers occurs. In a preferred embodiment, an elongated traveling band-shaped substrate having a select hole pattern therein functioning as the seed centers, is utilized as the carrier body.
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