| 摘要 |
PURPOSE:To enable gate capacity to be smaller and mutual conductance to be larger, by removing the side surface portions of a gate region which face to a drain region and a source region through an epitaxial layer. CONSTITUTION:On a silicon substrate 1 having a second conductivity type, an epitaxial layer 2 having a first conductivity type, a region 4 having the second conductivity type, a source region 8a and a drain region 8b which have the first conductivity type, and moreover, a gate region 9 having the second conductivity type are formed. Then, of the surfaces of said gate region 9 contacting with the epitaxial layer 2, the side surface portions facing to the source and drain regions 8a and 8b are removed by employing a photoetching technique by means of a silicon etching liquid, such as a mixed solution of nitric acid, hydrofluoric acid, and acetic acid. |
