| 摘要 |
PURPOSE:To increase the light power of a semiconductor light emitting element by forming a striped projection having a trapezoidal section on the other surface of a substrate having a striped contact metal on the one surface and covering the surface with the contact metal, thereby obtaining light source in a longitudinal direction. CONSTITUTION:A striped projection having trapezoidal section is formed on the other surface of a substrate having a striped contact metal on the one surface. Other contact metal is covered on the surface, and a light output is produced longitudinally. For example, N type InP buffer layer 4, InGaAsP active layer 5, P type InP carrier confining layer 6, P type InGaAsP contact layer 7 and SiO2 insulating layer 8 are sequentially grown on an N type InP substrate 2, and an AuZn striped contact gold layer and P type electrode 1 are formed. The top (a) of the projection on the other surface of the substrate is formed smaller than the bottom side (b) or is formed equal to the bottom side. The striped projection is covered with Au-Ge-N-In electrode 3. |
