| 摘要 |
PURPOSE:To prevent break away and deviation of position of a resist pattern by a method wherein the resist film of poly 1,1-dimethyl tetrafluoropropyl methacrylate is coated on a substrate, and after electron beam irradiation is performed, it is heat treated and developing treatment is performed. CONSTITUTION:The resist film of poly 1,1-dimethyl tetrafluoropropyl methacrylate (FPM) is formed on the substrate, and after the prescribed positions are irradiated with the electron beam, heat treatment is applied and developing treatment is performed. Accordingly adhesion of the FPM to the substrate is tightened, break away and deviation of position of the FPM is prevented, and the favorable FPM pattern is formed. |
