| 摘要 |
PURPOSE:To make possible the formation of a minute metal pattern on GaAs with a line in 1mum or less width by using the conventional lithography. CONSTITUTION:A GaAlAs layer 3 is epitaxially grown, the layer being composed of a semi-insulating GaAs 1 and an operating layer 2. A photoresist pattern 4 is then formed, using the conventional lithographic method. With the pattern as a mask, a V-shaped groove is formed in the GaAlAs epitaxialy layer 3. The GaAs exposed on the bottom of the groove is etched, and then a metal electrode 7 for a Schottky gate is evaporated on the exposed region. Next the GaAlAs is removed and the Schottky gate electrode 8 is formed on the operating layer 2 by lifting-off. Then a drain electrode 9 and source electrode 10 are formed through mesa-etching. By so doing, this process makes it possible to manufacture a transistor with a Schottky gate effect showing superior high frequency characteristics and a gate length shorter than the one exceeding the limit available from the conventional lithogrphic method. |
