| 摘要 |
PURPOSE:To keep the threshold voltage from going up too high, by orientating the crystal plane of the semiconductor substrate to the direction of [111] for the IG FET using the metal of high fusing point as the gate electrode materials. CONSTITUTION:When such metal of high fusing point as Mo is used as the gate electrode, the semiconductor substrate with crystal plane of the [111] direction is used. By so doing, the difference in work function between the metal of high fusing point and the semiconductor is offset by the fixed charge between the insulation film and the direction of the crystal plane [111] of the semiconductor. Therefore, it is possible to obtain the required threshold voltage by fixing the concentration of the channel part substrate required for the short channel MOS transistor as a standard. |
