| 摘要 |
PURPOSE:To improve the uniformity in the intensity of illumination on the irradiated surface of the wafer during the working of the flash discharge lamp by scanning the arc-shaped section thereof within the plane parallel to the wafer, intermittently lighting at a specific interval. CONSTITUTION:A photosensitive substance is applied on the silicone wafer 30mm. across, for instance, used as the substrate. For example, a flash discharge lamp with the arc length of 60mm. and the bulb inner diameter 4mm. having the bulb bent in an are 40mm. across is moved at a rate of 0.8mm./sec parallel to the wafer generating flashes with the pulse-width of 0.4m sec. once per 3sec to irradiate the entire wafer through the photomask. In this case, the ratio between the movement distance DELTA of the lamp between two successive flashes and the inner diameter r of the arc section of the flash discharge lamp is arranged to meet the relation of DELTA/r<=0.9. |
