| 摘要 |
PURPOSE:To manufacture non-volatile memory, by laminating the charge catching center layer TL on the gate insulation film on the semiconductor substrate and forming the insulation film through oxidation for the surface. CONSTITUTION:The SiO2 film 2 is implanted on the p type substrate 1,1 mu thick, removing the stray capacitance of the leads 5 and 6 and forming the p<+> implanted layer 11. The TL layer 9 of Si is laminated on the gate insulation film 10 and the thermal oxidation film 8 is made on the surface, then the film thickness can accurately be controllable. The Mo electrode 7 is placed on the film 8 and the n<+> layers 3,4 are made with the mask 7. With this constitution, taking the impurity concentration 1x10<20>cm<-3> for the layer 4 and 1x10<19>cm<-3> for the layer 11, the avalanche plasma is produced at 5 volts. + or -(20 to 40) volts are fed to the gate, injecting and catching and recombinating the ions with the electrons or positive holes under excitation. The concentration of electrons or positive holes excited with the plasma is independent of the avalanche plamsa producing voltage and it is better with high concentration for the layer 11. |
