发明名称 |
Two-phase continuous poly silicon gate CCD |
摘要 |
This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.
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申请公布号 |
US4156247(A) |
申请公布日期 |
1979.05.22 |
申请号 |
US19760750774 |
申请日期 |
1976.12.15 |
申请人 |
ELECTRON MEMORIES & MAGNETIC CORP |
发明人 |
HARTMAN, JOHN M;LEACH, GEORGE S |
分类号 |
H01L21/321;H01L21/3215;H01L21/339;H01L29/423;H01L29/768;(IPC1-7):H01L29/78;B01J17/00;G11C19/28;H01L29/04 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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