发明名称 |
Combined electron beam semiconductor modulator and junction laser |
摘要 |
A combined pulse modulated laser in which a modulated cold cathode device is utilized to excite a combined electron beam bombarded semiconductor device grown integrally with a crystal laser to achieve modulation of the laser output with fast rise and fall times under low voltage and high current conditions.
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申请公布号 |
US3942132(A) |
申请公布日期 |
1976.03.02 |
申请号 |
US19740504002 |
申请日期 |
1974.09.06 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
ZINN, MORTIMER H. |
分类号 |
H01J3/02;H01L33/00;H01S5/04;H01S5/042;(IPC1-7):H01S3/10;H01S3/19 |
主分类号 |
H01J3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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