发明名称 Combined electron beam semiconductor modulator and junction laser
摘要 A combined pulse modulated laser in which a modulated cold cathode device is utilized to excite a combined electron beam bombarded semiconductor device grown integrally with a crystal laser to achieve modulation of the laser output with fast rise and fall times under low voltage and high current conditions.
申请公布号 US3942132(A) 申请公布日期 1976.03.02
申请号 US19740504002 申请日期 1974.09.06
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY 发明人 ZINN, MORTIMER H.
分类号 H01J3/02;H01L33/00;H01S5/04;H01S5/042;(IPC1-7):H01S3/10;H01S3/19 主分类号 H01J3/02
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