TANTALUM SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

A tantalum sputtering target, wherein an orientation rate of a (100) plane of a sputtering surface of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of a sputtering surface of the tantalum sputtering target is 50% or less. A method of producing a tantalum sputtering target, wherein a molten tantalum ingot is subject to forging and recrystallization annealing and thereafter subject to rolling and heat treatment in order to form a crystal structure in which an orientation rate of a (100) plane of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of the tantalum sputtering target is 50% or less.;The present invention yields effects of being able to reduce the integral power consumption for burn-in of the tantalum target, easily generate plasma, stabilize the deposition rate, and reduce the resistance variation of the film by controlling the crystal orientation of the target.

主权项

1. A tantalum sputtering target, wherein an orientation rate of a (100) plane of a sputtering surface of the tantalum sputtering target is 30 to 90%, and an orientation rate of a (111) plane of a sputtering surface of the tantalum sputtering target is 50% or less.