发明名称 IN SITU NITROGEN DOPING OF CO-EVAPORATED COPPER-ZINC-TIN-SULFO-SELENIDE BY NITROGEN PLASMA
摘要 A method and apparatus for manufacturing a nitrogen-doped CZTSSe layer for a solar cell is disclosed. A substrate is mounted in a vacuum chamber. A plurality of effusion cells are placed within the vacuum chamber in order to evaporate copper, zinc, tin, sulfur, and/or selenium to form elemental vapors in a region proximate the substrate. An RF-based nitrogen source delivers a nitrogen plasma in the region proximal to the substrate. The elemental vapors and the nitrogen plasma form a gas mixture in the region near the substrate, which then react at the substrate to form a CZTSSe absorber layer for a solar cell.
申请公布号 US2016225927(A1) 申请公布日期 2016.08.04
申请号 US201514609985 申请日期 2015.01.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 Bojarczuk Nestor A.;Gershon Talia S.;Guha Supratik;Hopstaken Marinus;Shin Byungha
分类号 H01L31/032;H01L31/18 主分类号 H01L31/032
代理机构 代理人
主权项 1. (canceled)
地址 Armonk NY US