Electrostatic discharge (ESD) protection circuits, integrated circuits, systems, and methods for forming the ESD protection circuits

摘要

An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad is provided. The ESD protection circuit includes a first field oxide device coupled between a first terminal that is capable of providing a first supply voltage and the I/O pad. The first field oxide device includes a drain end having a first type of dopant and a source end having the first type of dopant. The first field oxide device includes a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device.

主权项

1. An electrostatic discharge (ESD) protection circuit coupled with an input/output (I/O) pad, the ESD protection circuit comprising:
a first field oxide device coupled between the I/O pad and a first terminal that is capable of providing a first supply voltage, the first field oxide device including a substrate, a drain end having a first type of dopant, a source end having the first type of dopant and a field oxide structure between the drain end and the source end, the first field oxide device including a first doped region having a second type of dopant disposed adjacent to the drain end of the first field oxide device and a second doped region having the second type of dopant disposed adjacent to the source end of the first field oxide device, wherein the field oxide structure is an isolation structure having a top surface co-planar with a top surface of the substrate, the field oxide structure is in a first well and both of the source end and the drain end are in a respective second well separate from the first well, and a depth of the second wells is equal to a depth of the first well.