| 摘要 |
<p>A plasma treatment apparatus and a plasma treatment method which are suitable for etching, ashing, CVD, etc. in the manufacturing process of a large scale integrated circuit (LSI) and a liquid crystal display (LSD). The side wall part (11) of a reaction chamber for plasma treatment is divided into an inner side wall (11a) which faces the inside of the reaction chamber and an outer side wall (11b) which faces the outside of the reaction chamber. The inner side wall (11a) is electrically isolated from the other parts of the reaction chamber and is not electrically grounded. With this construction, the reproducibility of the plasma treatment is improved. Further, the inner side wall (11a) is thermally isolated from the other parts of the reaction chamber and has a means for temperature control. With this construction, the temperature control of the inner side wall (11a) facing the reaction chamber is improved and the maintainability of the apparatus at the time of operation is further improved.</p> |
