| 摘要 |
PROBLEM TO BE SOLVED: To treat large-sized substrates in bulk at one time by providing plasma generating electrodes fitted parallel to substrates provided on holding stands revolving on lines. SOLUTION: Along lines 4a and 4b, respectively, plural plasma generating electrodes 6 are provided parallel to substrates, and, by prescribed driving mechanisms, the plasma generating electrodes 6 are reciprocated in the upper and lower directions at prescribed strokes in chambers 1A and 1B. When etching, while the plasma generating electrodes 6 are reciprocated in the upper and lower directions, prescribed RF electric power is fed from RF power sources 19 corresponding thereto. Simultaneously, etching gas and carrier gas are fed from gas introducing tubes 7. These gases are previously made into plasma by microwaves. In this way, plasma high in density is fed to each substrate in a uniform state, so that the etching treatment can be executed efficiently and uniformly. |
