| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of etching steps using photolithography. SOLUTION: On a glass substrate 1, a source electrode S, a source bus, a drain electrode D, and an accumulative capacitive electrode CS are made of common metallic material. In the vicinity of the source electrode S and the drain electrode D, a semiconductor layer 3 consisting of a-Si and an ohmic contact layer 3' consisting of n+a-Si are made. On an insulating film 4, a gate electrode G, a gate bus, and a first charge collector 6 are made of common metallic material. A photosensitive insulating film 7 is made all over to cover the gate electrode G, the gate bus, and the first charge collector 6 (excluding the center of the first charge collector), and the second charge collector 8 is made by ITO on the insulating film 7 and the first charge collector. The first charge collector 6 is connected to the drain electrode D through the contact hole 5 made in the insulating film 4.
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