发明名称 |
Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component |
摘要 |
An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer. |
申请公布号 |
US9412971(B2) |
申请公布日期 |
2016.08.09 |
申请号 |
US201214232632 |
申请日期 |
2012.07.05 |
申请人 |
OSRAM OLED GMBH |
发明人 |
Reusch Thilo |
分类号 |
H01L51/52;H05B33/04;H01L51/44 |
主分类号 |
H01L51/52 |
代理机构 |
Viering, Jentschura & Partner mbB |
代理人 |
Viering, Jentschura & Partner mbB |
主权项 |
1. An encapsulation structure for an optoelectronic component, comprising:
a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and comprising a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer. |
地址 |
Regensburg DE |