发明名称 Encapsulation structure for an optoelectronic component and method for encapsulating an optoelectronic component
摘要 An encapsulation structure for an optoelectronic component may include: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and including a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.
申请公布号 US9412971(B2) 申请公布日期 2016.08.09
申请号 US201214232632 申请日期 2012.07.05
申请人 OSRAM OLED GMBH 发明人 Reusch Thilo
分类号 H01L51/52;H05B33/04;H01L51/44 主分类号 H01L51/52
代理机构 Viering, Jentschura & Partner mbB 代理人 Viering, Jentschura & Partner mbB
主权项 1. An encapsulation structure for an optoelectronic component, comprising: a barrier thin-film layer for protecting an optoelectronic component against chemical impurities; a cover layer applied above the barrier thin-film layer and serving for protecting the barrier thin-film layer against mechanical damage; and an intermediate layer applied on the barrier thin-film layer between barrier thin-film layer and cover layer and comprising a curable material designed such that when the non-cured intermediate layer is applied to the barrier thin-film layer, particle impurities at the surface of the barrier thin-film layer are enclosed by the intermediate layer and the applied intermediate layer has a substantially planar surface, and that after the intermediate layer has been cured, mechanical loads on the barrier thin-film layer as a result of particle impurities during the application of the cover layer are reduced by the intermediate layer.
地址 Regensburg DE