发明名称 DYNAMIC RANDOM ACESS MEMORY DEVICE
摘要 A dynamic random access memory device can enter a diagnostic mode of operation to see whether or not undesirable short-circuit takes place in a word line and/or a control signal line for transfer gates between bit lines and a sense amplifier unit, and a built-in testing operation discriminating unit discriminates the testing operation on the word lines and the control signal lines from other testing operations for causing a power supply system to interrupt electric power to a row address decoder unit and a driver unit for the control signal lines so that voltage level on a word line and/or a control signal line is rapidly decayed due to the short-circuit, thereby screening out the defective products before the delivery from the manufacturer.
申请公布号 KR950011730(B1) 申请公布日期 1995.10.09
申请号 KR19920001165 申请日期 1992.01.28
申请人 NIPPON DENKI K.K. 发明人 SKIBAYASHI, TADAHIKO
分类号 G11C11/401;G11C11/407;G11C11/409;G11C29/00;G11C29/02;G11C29/04;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C11/401
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