| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-precision method for designing the loss of a semiconductor element which is required for designing a power converter of high output power density. SOLUTION: In the method for designing a power converter, specifications of the power converter is determined, and its circuit parameter values, semiconductor elements used, and the equivalent circuit of the semiconductor element are determined, and the parameter values of the equivalent circuit of semiconductor element are extracted (S7). Loss of the semiconductor element is calculated (S9) from the parameter data of the equivalent circuit of semiconductor element, the parasitic parameter data of the circuit and the basic parameters of the circuit. While account of the parameter data of the elements of a power conversion circuit are taken into account, optimal values for circuit loss is are decided, and the parasitic parameter data values of the circuit are reset and the parasitic parameter data of the circuit is generated, if they are not attained otherwise the loss of the semiconductor element and the parasitic parameter values of the circuit are outputted as design data (S14), and then a power converter is designed using the optimized loss of the semiconductor element and parasitic parameter data values of the circuit. COPYRIGHT: (C)2008,JPO&INPIT
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