Light emitting diode package structure

摘要

A LED package structure including a carrier substrate, a flip-chip LED and a molding compound is provided. The carrier substrate includes a main body and a patterned conductive layer embedded in the main body. The main body is composed of polymer material. The main body has a cavity, and a bottom surface of the cavity is aligned with an upper surface of the patterned conductive layer. A difference in coefficient of thermal expansion between the main body in a rubbery state and the patterned conductive layer is smaller than 30 ppm/° C. The flip-chip LED is disposed inside the cavity and electrically connected to the patterned conductive layer. The molding compound is disposed inside the cavity and encapsulates the flip-chip LED. A vertical distance between a top surface of the molding compound and the bottom surface of the cavity is smaller than or equal to a depth of the cavity.

主权项

1. A light emitting diode package structure, comprising:
a carrier substrate, comprising a main body and a patterned conductive layer embedded in the main body, the main body being composed of a polymer material, and the main body having a cavity, and a bottom surface of the cavity being aligned with an upper surface of the patterned conductive layer, wherein a difference in coefficient of thermal expansion between the main body in a rubbery state and the patterned conductive layer is smaller than 30 ppm/° C.; a flip-chip light emitting diode, disposed inside the cavity of the carrier substrate, and straddling the patterned conductive layer; and a molding compound, disposed inside the cavity of the carrier substrate, and encapsulating the flip-chip light emitting diode, wherein a vertical distance between a top surface of the molding compound and the bottom surface of the cavity is equal to a depth of the cavity.