| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which has a small sense amplifier and can write data in memory cells without fail. SOLUTION: This semiconductor memory has a first and second bit lines BLL, bBLL connected to memory cells MC to transmit data in the polarity reverse to each other; a first and second sense nodes SA, bSA; a first transfer gate TGL1 between the first bit line and the first sense node; a second transfer gate TGL2 between the second bit line and the second sense node, latch circuits FF1, FF2 between the sense nodes SA, bSA, a write-in signal line FBL activated when writing or writing-back data to the memory cells; and a gate circuit GCL to connect the write-in signal line to the first bit line and connect the first sense node to the second bit line, or to connect the write-in signal line to the second bit line and connect the second sense node to the first bit line when writing or writing-back data. COPYRIGHT: (C)2008,JPO&INPIT
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