| 摘要 |
One embodiment of a nonvolatile memory cell comprises a substrate having a surface, a bidirectional current switch comprising a first electrode, a second electrode, and a semiconductor layer disposed between the first and second electrodes, and a magnetoresistive element having a direct contact with the bidirectional current switch and comprising a free ferromagnetic layer having a reversible magnetization direction, a pinned ferromagnetic layer having a fixed magnetization direction, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the magnetization direction of the free ferromagnetic layer is reversed by a bidirectional spin polarized current running through the magnetoresitive element in a direction perpendicular to the substrate surface, and wherein a magnitude of the spin polarized current is controlled by the bidirectional current switch. Other embodiments are described and shown. |
| 主权项 |
1. A nonvolatile memory cell comprising:
a substrate having a surface; a magnetoresistive element comprising a free ferromagnetic layer having first reversible magnetization direction, a pinned ferromagnetic layer having a second fixed magnetization direction, a tunnel barrier layer disposed between the free and pinned ferromagnetic layers; and a bidirectional current switch coupled in series with the magnetoresistive element and comprising a first electrode, a second electrode, and a semiconductor layer disposed between the first and second electrodes, wherein the first electrode comprising a first conductive layer having a direct contact with the semiconductor layer and comprising at least one element selected from the group consisting of Pt, Pd, Ir, Al, Cu, AlCu, Au, Ag, Rh, Ti, Co, Ni, Fe, TiN, TaN, NiCr, TiW, WSi, TiSi, PtSi, PdSi, NiSi, and a second conductive layer having a direct contact with the free ferromagnetic layer and comprising at least one element selected from the group consisting of Hf, Ta, W, Nb, Mo, V, and Cr. |
