| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer. |
| 申请公布号 |
US2016343729(A1) |
申请公布日期 |
2016.11.24 |
| 申请号 |
US201615142365 |
申请日期 |
2016.04.29 |
| 申请人 |
SHIN Hyun-Jin;KIM Hong-Suk;KIM Jung-Hwan;LEE Sang-Hoon;LIM Hun-Hyeong;CHO Yong-Seok;KIM Young-Dae;YANG Han-Vit |
发明人 |
SHIN Hyun-Jin;KIM Hong-Suk;KIM Jung-Hwan;LEE Sang-Hoon;LIM Hun-Hyeong;CHO Yong-Seok;KIM Young-Dae;YANG Han-Vit |
| 分类号 |
H01L27/115;H01L21/768;H01L21/02;H01L21/28;H01L21/3105;H01L21/311 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer. |
| 地址 |
Seoul KR |
