| 主权项 |
1. A method of defining poly-silicon growth direction, comprising steps of:
step 1, providing a glass substrate and cleaning the glass substrate; step 2, forming a buffer layer on the glass substrate; step 3, forming a metal film layer on the buffer layer; step 4, implementing etching to the metal film layer with an acid liquid to form a metal film array; step 5, covering an area of the buffer layer outside the metal film array with a high-purity quartz mask to expose the metal film array; step 6, forming a graphene layer on the high-purity quartz mask and the metal film array; step 7, implementing etching to the graphene layer to form a graphene layer array coinciding with the metal film array of the fourth step; step 8, forming an amorphous silicon thin film on the buffer layer having the metal film array and the graphene layer array; step 9, implementing high temperature dehydrogenation to the amorphous silicon thin film; step 10, implementing an Excimer laser anneal process to the amorphous silicon thin film, and the amorphous silicon thin film melts after absorbing the energy of the laser and temperature rising; step 11, melted amorphous silicon is re-crystallized and starts growing and becomes larger from a low temperature area comprising the metal film array and the graphene layer array toward high temperature areas around to form poly-silicon. |
