SWITCHING ELEMENT, AND METHOD FOR PRODUCING SWITCHING ELEMENT

摘要

Provided is a nonvolatile switching element which has high retention ability even if programmed at a low current, while being suppressed in dielectric breakdown of a variable resistance layer during a reset operation. This switching element is provided with: a first electrode; a second electrode; and a variable resistance layer that is arranged between the first electrode and the second electrode and has ion conductivity. The first electrode contains a metal which generates metal ions that can be conducted in the variable resistance layer. The second electrode is provided with: a first electrode layer that is formed in contact with the variable resistance layer; and a second electrode layer that is formed in contact with the first electrode layer. The first electrode layer is formed of a ruthenium alloy that contains ruthenium and a first metal having a larger standard Gibbs energy of formation of oxide than ruthenium in the negative direction. The second electrode layer is formed of a nitride that contains the first metal. The content of the first metal in the first electrode layer is lower than the content of the first metal in the second electrode layer.

主权项

1. A switching element comprising:
a first electrode, a second electrode, and a variable resistance layer with ion-conductivity disposed between the first electrode and the second electrode; wherein: the first electrode includes a metal that generates a metal ion conductive in the variable resistance layer, the second electrode is provided with a first electrode layer formed in contact with the variable resistance layer and a second electrode layer formed in contact with the first electrode layer; the first electrode layer is formed with a ruthenium alloy containing ruthenium and a first metal with a standard Gibbs energy of formation with respect to an oxidation process larger in the negative direction than ruthenium; the second electrode layer is formed with a nitride containing the first metal, and the content of the first metal in the first electrode layer is lower than the content of the first metal in the second electrode layer.